View BLA1011-10_195534.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLA1011-10 Avionics LDMOS transistor
Product specification Supersedes data of 2002 Oct 02 2003 Nov 19
Philips Semiconductors
Product specification
Avionics LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS * Avionics transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION
2 1
BLA1011-10
PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
3
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
Top view
MBK584
Fig.1 Simplified outline (SOT467C).
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 50 s; = 2 % ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BLA1011-10 - DESCRIPTION flanged LDMOST ceramic package; 2 mounting holes; 2 leads VERSION SOT467C f (MHz) 1030 to 1090 VDS (V) 36 PL (W) 10 Gp (dB) >15 D (%) >40
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Th 25 C CONDITIONS - - - - -65 - MIN. MAX. 75 15 2.2 25 +150 200 V V A W C C UNIT
2003 Nov 19
2
Philips Semiconductors
Product specification
Avionics LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Zth(j-mb) Rth(mb-h) Notes 1. Thermal impedance is determined under RF operating conditions with pulsed bias. 2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10 V; ID = 20 mA VGS = 0; VDS = 28 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 0.75 A VGS = 10 V; ID = 0.75 A 4 - - - - MIN. 75 - - - - - 0.5 1.2 PARAMETER thermal impedance from junction to mounting base thermal resistance from mounting base to heatsink note 2 CONDITIONS Tmb = 25 C; note 1
BLA1011-10
VALUE 1.2 0.55
UNIT K/W K/W
TYP.
MAX. - 5 0.1 - 40 - -
UNIT V V mA A nA S
VGS = VGSth + 9 V; VDS = 10 V 2.8
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.55 K/W unless otherwise specified. MODE OF OPERATION Pulsed class-AB; tp = 50 s; = 2% f (MHz) 1030 to 1090 VDS (V) 36 IDQ (mA) 50 PL (W) 10 Gp (dB) >15 D (%) >40 tr (ns) <20 tf (ns) <20 PULSE DROOP (dB) <0.5
Ruggedness in class-AB operation The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the operating conditions. Typical impedance values FREQUENCY (MHz) 1030 1060 1090 ZS () 1 + j 10.6 1.3 + j 6.99 1.42 + j 7 ZL () 4.3 + j 7 5.99 + j 13.98 7 + j 11.58
2003 Nov 19
3
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
handbook, halfpage
15
MGU494
handbook, halfpage
PL (W)
24 Gp (dB) 20
MGU493
D
Gp
60
D (%) 50
10
16
(1) (2) (3)
40
12
(1) (2) (3)
30
5
8
20
4
10
0 0 50 100 PD (mW) 150
0 0 5 10 PL (W)
0 15
Th = 25 C; VDS = 36 V; IDQ = 50 mA; class-AB; tp = 50 s; = 2%. (1) f = 1090 MHz. (2) f = 1060 MHz. (3) f = 1030 MHz.
Th = 25 C; VDS = 36 V; IDQ = 50 mA; class-AB; tp = 50 s; = 2%. (1) f = 1090 MHz. (2) f = 1060 MHz. (3) f = 1030 MHz.
Fig.2
Load power as a function of drive power; typical values.
Fig.3
Power gain and efficiency as functions of load power; typical values.
handbook, halfpage G
24 p (dB) 20
MGU495
handbook, halfpage
12
MGU496
PL (W) 8
16
12
8
4
4
0 1000
0 1040 1080 f (MHz) 1120 0 1 2 3 4 VGS (V) 5
Th = 25 C; VDS = 36 V; IDQ = 50 mA; class-AB; PL = 10 W; tp = 50 s; = 2%.
Th = 25 C; VDS = 36 V; IDQ = 50 mA; class-AB; f = 1090 MHz; tp = 50 s; = 2%.
Fig.4
Power gain as a function of frequency; typical values.
Fig.5
Load power as a function of gate-source voltage; typical values.
2003 Nov 19
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
handbook, full pagewidth
51.75
51.75
C13 C14 C7 C6 C5 C1 C2 C3 C4 R1 C15 3.2 13.5 37.5 C8 C10 3.5 6.0 9.3 C9 C11 60 C12
MGU497
Dimensions in mm. The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm; r = 6.2), the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
Fig.6 Printed-circuit board for class-AB test circuit.
List of components for class-AB test circuit (see Fig.6) COMPONENT C1 C2, C11 C3 C4 C5 C6 C7, C13 C8 C9 C10 C12 C14 C15 R1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 200B or capacitor of same quality. 2003 Nov 19 5 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 tekelec trimmer; type 37293 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 electrolytic capacitor multilayer ceramic chip capacitor; note 1 SMD resistor (0805) 2.7 pF 56 pF 0.8 to 8 pF 3.6 pF 6.2 pF 2 pF 62 pF 11 pF 1.5 pF 6.2 pF 20 nF 4.7 F; 50 V 36 pF 22 VALUE
Philips Semiconductors
Product specification
Avionics LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLA1011-10
SOT467C
D
A F
3
D1
U1 q C
B c
1
E1 H U2 E
A
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51
0.184 0.220 0.006 0.155 0.210 0.004
0.364 0.365 0.356 0.355
0.235 0.065 0.225 0.055
0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225
OUTLINE VERSION SOT467C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-06 99-12-28
2003 Nov 19
6
Philips Semiconductors
Product specification
Avionics LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data Preliminary data PRODUCT STATUS(2)(3) DEFINITION
BLA1011-10
Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Nov 19
7
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Nov 19
8
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/05/pp9
Date of release: 2003
Nov 19
Document order number:
9397 750 12244

▲Up To Search▲

Price & Availability of BLA1011-10

	To Download BLA1011-10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .